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NPN Silicon Phototransistor
OP800A, OP800B, OP800C, OP800D
Absolute Maximum Ratings (T A =25° C unless otherwise noted)
-65 C to +150 o C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Emitter-Collector Voltage
Continuous Collector Current
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
Power Dissipation
30 V
30 V
5V
5V
50 mA
o
-65 o C to +125 o C
260° C (2)
250 mW (3)
Notes:
1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
2. Derate linearly 2.5 mW/° C above 25° C.
3. Junction temperature maintained at 25° C.
4. Light source is a GaAIAs LED, 890 nm peak emission wavelength, providing a 0.5 mW/cm 2 radiant intensity on the unit
under test. The intensity level is not necessarily uniform over the lens area of the unit under test.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue A 9/2010
Page 2 of 3
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
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